PART |
Description |
Maker |
OM6035NM |
200V, N-Channel, 30Amp MOSFET(200V ,30A, N沟道,MOS场效应管) 00V,N沟道30Amp MOSFET的(00V0A条,沟道来说,MOS场效应管
|
Omnirel International Rectifier, Corp.
|
FQI10N20 FQB10N20 FQB10N20TM |
200V N-Channel QFET 200V N-Channel MOSFET CAP 2200PF 100V 10% NP0(C0G) DIP-2 TUBE-PAK R-MIL-PRF-39014/22
|
http:// FAIRCHILD[Fairchild Semiconductor] Fairchild Semiconductor Corporation
|
FQPF32N20C FQP32N20C |
200V N-Channel Advance Q-FET C-Series From old datasheet system 200V N-Channel MOSFET
|
FAIRCHILD[Fairchild Semiconductor] FAIRCHILD SEMICONDUCTOR CORP
|
IRFP250 IRFP250B IRFP250BFP001 |
200V N-Channel B-FET / Substitute of IRFP250 & IRFP250A 200V N-Channel MOSFET
|
FAIRCHILD[Fairchild Semiconductor]
|
FQU630 FQD630 FQD630TM |
200V N-Channel QFET 200V N-Channel MOSFET(N沟道增强型MOS场效应管(漏电流7A, 漏源电压200V,导通电.4Ω
|
FAIRCHILD[Fairchild Semiconductor] Fairchild Semiconductor Corporation
|
IRFU210B IRFR210B IRFU210BTLTUFP001 IRFU210BTUFP00 |
200V N-Channel B-FET / Substitute of IRFR210 & IRFR210A 200V N-Channel MOSFET 200V N-Channel B-FET / Substitute of IRFU210 & IRFU210A
|
FAIRCHILD[Fairchild Semiconductor]
|
MRF6S9060NR1 MRF6S9060MR1 MRF6S9060NBR1 MRF6S9060M |
RF Power Field Effect Transistors CAP 10PF 200V 200V X7R RAD.20 .20X.20 BULK P-MIL-PRF-39014 CAP CER .10UF 100V 20% AXIAL
|
Freescale (Motorola) 飞思卡尔半导体(中国)有限公司
|
FQE10N20C FQE10N20CTU |
200V N-Channel Advance Q-FET C-Series 200V N-Channel MOSFET
|
FAIRCHILD[Fairchild Semiconductor]
|
IRFD9210 |
-200V Single P-Channel HEXFET Power MOSFET in a HEXDIP package Power MOSFET(Vdss=-200V, Rds(on)=3.0ohm, Id=-0.40A)
|
International Rectifier
|
IRFD210 |
200V Single N-Channel HEXFET Power MOSFET in a HEXDIP package Power MOSFET(Vdss=200V, Rds(on)=1.5ohm, Id=0.60A)
|
International Rectifier
|
IRFNL210B EA0610P |
200V N-Channel MOSFET 200V N-Channel B-FET TO-92L
|
FAIRCHILD[Fairchild Semiconductor]
|